On Semiconductor Transistor (BJT) - diskret MJ11015G TO-3 Anzahl Kanäle 1 PNP - Darlington

Description

Bipolar transistors are the leading electronic manufacturers. We provide you with all the necessary documentation, which can be downloaded free of charge via the internet. Current – Residual Collector Base (Max.) : -1 mA IC Manifold Current: -30A Manufacturer: ON Semiconductor Frequency - Transition : 4 MHz DC Current Gain (hFE) (min.) : 1000 IC: -20A Number of channels : 1 Power (max) P(TOT): 200 W. Manufacturer's Sigle (Components): OnS Voltage - disruptive collector transmitter (max.) -120V Type (Manufacturer Type): MJ11015G FET Type: PNP - Darlington Case Type (Semiconductor): TO-3 Mounting Type: Through Hole Transistor type (Catégorisation): Transistor (BJT) - Discreet VCE: -5V Vce Saturation (max.) : -4V