Description
- Manufacturer: GeneSiC Semiconductor Product Category: IGBT Transistors RoHS: Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 3 V Maximum Gate Emitter Voltage: 20 V Gate-Emitter Leakage Current: 0.3 mA Maximum Operating Temperature: + 150 C Package / Case: TO-247AB Packaging: Tube Brand: GeneSiC Semiconductor Minimum Operating Temperature: - 40 C
- Mounting Style: Through Hole Series:
IGBT Transistors 1200V 35A SIC IGBT CoPak